BF Transistor Datasheet pdf, BF Equivalent. Parameters and Characteristics. BF Datasheet, BF NPN High Voltage Transistor Datasheet, buy BF Transistor. BF BF; BF; NPN High-voltage Transistors. FEATURES Low current ( max. mA) High voltage (max. V).. APPLICATIONS Intended for video.
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This data sheet contains final product specifications. NPN medium power transistor. To make this website work, we log user data and share it with processors. Quick reference data Rev.
BF Datasheet(PDF) – STMicroelectronics
Description High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications More information. Product specification Supersedes data of May No liability will be accepted by the publisher for any consequence of its use.
Product data datxsheet Supersedes data of May Start display at page:. Please v isit our website for pricing and availability at www. Product specification Supersedes data of Apr Stress above one or more of the limiting values may cause permanent damage to the device. Secondary protection for DSL lines. V SCA63 All rights are reserved.
BF Philips NPN high-voltage transistors ChipFind Datasheet Archive |
Designed for general-purpose amplifier and low speed switching applications. A linear amplifier 1. Easy pick and place. High surge current capability.
New Jersey Semiconductor
Rosaline Carr 1 years ago Views: They are designed for high speed More information. Designed for use in general purpose power amplifier and switching applications. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More information.
For surface mounted application. Philips Semiconductors, 6F, No. Product specification Supersedes data of Dec 06″. Philips Semiconductors Philippines Inc.
NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Dimensions Inches Millimeters Features: General description PNP general-purpose transistors.
This Datasheet is presented by the m anufacturer. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Product specification Supersedes data of Dec Product specification Supersedes data of Aug These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications.
N-channel enhancement mode field-effect transistor Rev. RF transistor with internal bias circuit.