Full text of “IC Datasheet: EPROM” Jameco Part Number M NMOS Kbit (32Kb x 8) UV EPROM NOT FOR NEW DESIGN □ FAST. datasheet, pdf, data sheet, datasheet, data sheet, pdf, General NMOS K 32K x 8 UV EPROM Others with the same file for datasheet. (EPROM). The device is organized as 32K words by 8 bits (32K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin.
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When parallel programming several devices which share the common bus, Vpp should be lowered to Vcc 6V and the normal read mode used to exe- cute a program verify. The M should be placed within 2.
The Fast Programming Algorithm utilizes two different pulse types: Except for E, all like inputs including G of the parallel M may be common. The magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the epro, at the output.
Some lamps have a filter on their tubes which should be re- moved before erasure. This mode is intended for use by programming equipment for the purpose of automatically matching the device datasbeet be programmed with its corresponding programming algorithm. For further information on any aspect dxtasheet this device, please contact STMicroelectronics Sales Office nearest to you. Although only “Os” will be programmed, both “1 s” and “Os” can be present in the data word.
The data to be pro- grammed is applied 8 bits in parallel to the data output pins.
Datasheet(PDF) – Intel Corporation
Programming reliability is also ensured as the incremental program margin of each byte is continually monitored to determine when it has been successfully programmed. The M is in the programming mode when Vpp input is at 1 2.
The length of the Over-program Pulse varies from 2. The bulk capacitor should be located near the power supply connection point. Program Verify A verify should be performed on the programmed bits to determine that they were correctly pro- grammed.
Data s available at the ojjtputs after the falling edge of G, assuming that E has been low and the ad- dresses have been stable for at least tAvav-tcLov.
Program Inhibit Programming of multiple Ms in parallel with different data is also easily accojnplished. The levels required forthe address and data inputs are TTL. The two line control function allows: The only way to change a “0” to a “1 ” is by ultraviolet light erasure. For the STMi- croelectronics M, these two identifier bytes are given below. Assuming that the addresses are stable, address access time tflivov is equal to the delay from E to output tELOv. Standby Mode The M has a standby mode which reduces the maximum active power current from mA to 40mA.
F ceramic capacitor be used on every device between Vcc and Vss- This should be a high frequency capacitor of low inherent inductance and should be placed as close to the device as possible.
These are stress ratings oniy and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. The duration of the initial E pulse s is 1 ms, which will then be followed by a longer over- program pulse of length 3ms by n n is equal to the number of the initial one millisecond pulses applied Table 3.
Vcc must be applied simultaneously with or before Vpp and removed simultaneously or after Vpp. If the M is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque lables be put over the M window to prevent unintentional erasure.
The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. Specifications mentioned in this publication are subject to change without notice.
A high level E input inhibits the other Ms from being programmed. Two identifier bytes may then be sequenced from the device outputs by toggling address line AO from Vil to Vih. The recommended erasure procedure for the M is exposure to short vyave ultraviolet light which has wavelength A. Research shows that constant exposure to room level fluorescent lighting could erase a typical M in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight.
When in the standby mode, the outputs are in a high impedance state, independent of the G input. To activate this mode, the programming equipment must force A single 5V power supply is required in the read mode.
The associated transient voltage peaks can be sup- pressed by complying with the two line output control and by properly selected decoupling ca- pacitors. This publication supersedes and replaces all information previously supplied. Data is introduced by selectively programming “Os” into the desired bit locations. Output Enable G is the output control and should datssheet used to gate data to the output pins, inde- pendent of device selection.
27256 – 27256 256K EPROM Datasheet
It is organized as Chip Enable E is the datasueet control and should be used for device selection. It is recommended that a 1 j.
All other address lines must be held at Vil during Electronic Signature mode.